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GM71V18163CL-6 参数 Datasheet PDF下载

GM71V18163CL-6图片预览
型号: GM71V18163CL-6
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 16位CMOS动态RAM [1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 11 页 / 115 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM71V18163C
GM71VS18163CL
Pin Description
Pin
A0-A9
A0-A9
I/O0-I/O15
RAS
UCAS, LCAS
Function
Address Inputs
Refresh Address Inputs
Data-In/Out
Row Address Strobe
Column Address Strobe
Pin
WE
OE
V
CC
V
SS
NC
Function
Read/Write Enable
Output Enable
Power (+3.3V)
Ground
No Connection
Ordering Information
Type No.
GM71V(S)18163CJ/CLJ -5
GM71V(S)18163CJ/CLJ -6
GM71V(S)18163CJ/CLJ -7
GM71V(S)18163CT/CLT -5
GM71V(S)18163CT/CLT -6
GM71V(S)18163CT/CLT -7
Access Time
50ns
60ns
70ns
50ns
60ns
70ns
Package
400 Mil
42 Pin
Plastic SOJ
400 Mil
44(50) Pin
Plastic TSOP II
Absolute Maximum Ratings*
Symbol
T
A
T
STG
V
IN/OUT
V
CC
I
OUT
P
D
Parameter
Ambient Temperature under Bias
Storage Temperature
Voltage on any Pin Relative to V
SS
Supply Voltage Relative to V
SS
Short Circuit Output Current
Power Dissipation
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ Vcc+0.5
(<=4.6V(MAX))
-0.5 ~ 4.6
50
1.0
Unit
C
C
V
V
mA
W
Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Rev 0.1 / Apr’01