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GM76C256CLT-55W 参数 Datasheet PDF下载

GM76C256CLT-55W图片预览
型号: GM76C256CLT-55W
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 120ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 11 页 / 183 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM76C256CW Series
AC CHARACTERISTICS(II)
Vcc = 5V
±10%,
T
A
= 0°C to 70°C (Normal) unless otherwise specified.
-55
# Symbol
Parameter
Min.
Max.
READ CYCLE
1
tRC
Read Cycle Time
55
-
2
tAA
Address Access Time
-
55
3
tACS
Chip Select Access Time
-
55
4
tOE
Output Enable to Output Valid
-
30
5
tCLZ
Chip Select to Output in Low Z
10
-
6
tOLZ
Output Enable to Output in Low Z
5
-
7
tCHZ
Chip Disable to Output in High Z
0
20
8
tOHZ
Out Disable to Output in High Z
0
20
9
tOH
Output Hold from Address Change
5
-
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
11 tCW
Chip Selection to End of Write
50
-
12 tAW
Address Valid to End of Write
50
-
13 tAS
Address Set-up Time
0
-
14 tWP
Write Pulse Width
45
-
15 tWR
Write Recovery Time
0
-
16 tWHZ
Write to Output in High Z
0
20
17 tDW
Data to Write Time Overlap
25
-
18 tDH
Data Hold from Write Time
0
-
19 tOW
Output Active from End of Write
5
-
-70
Min.
Max.
70
-
-
-
10
5
0
0
10
70
65
60
0
50
0
0
30
0
5
-
70
70
35
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal) unless otherwise specified.
Parameter
Input Pulse Level
5V
3V
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
Others
Value
0.6V to 2.4V
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
T
A
= 25°C, f = 1.0MHz
Symbol
Parameter
Condition
C
IN
Input Capacitance
V
IN
= 0V
C
I/O
Input /Output Capacitance
V
I/O
= 0V
Note : These parameters are sampled and not 100% tested
Max.
6
8
Unit
pF
pF
Rev 02 / Apr. 2001
4