欢迎访问ic37.com |
会员登录 免费注册
发布采购

GM76U256CLET-12 参数 Datasheet PDF下载

GM76U256CLET-12图片预览
型号: GM76U256CLET-12
PDF下载: 下载PDF文件 查看货源
内容描述: X8 SRAM\n [x8 SRAM ]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 175 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号GM76U256CLET-12的Datasheet PDF文件第2页浏览型号GM76U256CLET-12的Datasheet PDF文件第3页浏览型号GM76U256CLET-12的Datasheet PDF文件第4页浏览型号GM76U256CLET-12的Datasheet PDF文件第5页浏览型号GM76U256CLET-12的Datasheet PDF文件第7页浏览型号GM76U256CLET-12的Datasheet PDF文件第8页浏览型号GM76U256CLET-12的Datasheet PDF文件第9页浏览型号GM76U256CLET-12的Datasheet PDF文件第10页  
GM76U256C Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
tAA
OE
tOE
tOLZ
CS
tACS
tCLZ
Data
Out
High-Z
Data Valid
tOHZ
tCHZ
tOH
Note(READ CYCLE):
1. t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, t
CHZ
max. is less than t
CLZ
min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= V
IL.
3. /OE =V
IL
.
Rev 02 / Apr. 2001
5