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GM76V256CLE-85 参数 Datasheet PDF下载

GM76V256CLE-85图片预览
型号: GM76V256CLE-85
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 10 页 / 136 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM76V256C Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
tAA
OE
tOE
tOLZ
CS
tACS
tCLZ
Data
Out
High-Z
Data Valid
tOHZ
tCHZ
tOH
Note(READ CYCLE):
1. t
CHZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, t
CHZ
max. is less than t
CLZ
min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= V
IL.
3. /OE =V
IL
.
Rev 00 / Jul. 2000
5