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GM76V256C 参数 Datasheet PDF下载

GM76V256C图片预览
型号: GM76V256C
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8位的3.3V低功耗CMOS SRAM慢 [32K x8 bit 3.3V Low Power CMOS slow SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 175 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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GM76V256C Series
ORDERING INFORMATION
Part No.
GM76V256CL
GM76V256CLL
GM76V256CLE
GM76V256CLLE
GM76V256CLFW
GM76V256CLLFW
GM76V256CLEFW
GM76V256CLLEFW
GM76V256CLT
GM76V256CLLT
GM76V256CLET
GM76V256CLLET
Speed
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
85/100
Power
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
L-part
LL-part
Temp
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
0 to 70°C
0 to 70°C
-25 to 85°C
-25 to 85°C
Package
PDIP
PDIP
PDIP
PDIP
SOP
SOP
SOP
SOP
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
GM76V256C
GM76V256CE
Storage Temperature
Power Dissipation
Data Output Current
Lead Soldering Temperature & Time
Rating
-0.3 to 4.6
0 to 70
-25 to 85
-65 to 150
1.0
50
260
•10
Unit
V
°C
°C
°C
W
mA
°C•sec
T
STG
P
D
I
OUT
T
SOLDER
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Vcc
Power Supply Voltage
3.0
Vss
Ground
0
V
IH
Input High Voltage
2.2
V
IL
Input Low Voltage
-0.3
(1)
Note
1. V
IL
= -3.0V for pulse width less than 50ns
Typ.
3.3
0
-
-
Max.
3.6
0
Vcc+0.3
0.4
Unit
V
V
V
V
TRUTH TABLE
/CS
/WE /OE
Mode
H
X
X
Standby
L
H
H
Output Disabled
L
H
L
Read
L
L
X
Write
Note
1. H=V
IH
, L=V
IL
, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
Rev 02 / Apr. 2001
2