GMS81508B/16B/24B
HYUNDAI MicroElectronics
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage ............................................. -0.3 to +7.0 V
Storage Temperature .................................. -40 to +125
°C
Voltage on any pin with respect to Ground (V
SS
)
..................................................................-0.3 to V
DD
+0.3
Maximum current out of V
SS
pin .......................... 150 mA
Maximum current into V
DD
pin .............................. 80 mA
Maximum current sunk by (I
OL
per I/O Pin) .......... 20 mA
Maximum output current sourced by (I
OH
per I/O Pin)
................................................................................... 8 mA
Maximum current (ΣI
OL
) ...................................... 100 mA
Maximum current (ΣI
OH
)........................................ 50 mA
Note:
Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
7.2 Recommended Operating Conditions
Specifications
Parameter
Symbol
Condition
Min.
Supply Voltage
V
DD
f
XIN
=1 ~ 10 MHz
f
XIN
=1 ~ 8 MHz
f
XIN
=1 ~ 4 MHz
V
DD
=4.5~5.5V
V
DD
=2.7~5.5V
V
DD
=2.2~5.5V
Normal Version
Temperature Extention Version
4.5
2.7
2.2
1
1
1
-20
-40
Max.
5.5
5.5
5.5
10
8
4
85
85
V
Unit
Operating Frequency
f
XIN
MHz
Operating Temperature
T
OPR
°C
7.3 A/D Converter Characteristics
(T
A
=25°C, V
SS
=0V, V
DD
=5.12V@f
XIN
=8MHz, V
DD
=3.072V@f
XIN
=4MHz)
Specifications
Parameter
Symbol
Min.
Analog Input Voltage Range
Non-linearity Error
Differential Non-linearity Error
Zero Offset Error
Full Scale Error
Gain Error
Overall Accuracy
AV
DD
Input Current
Conversion Time
V
AIN
N
NLE
N
DNLE
N
ZOE
N
FSE
N
GE
N
ACC
I
REF
T
CONV
V
SS
-
-
-
-
-
-
-
-
Max.
Typ.
1
-
±1.0
±1.0
±0.5
±0.35
±1.0
±1.0
0.5
-
f
XIN
=4MHz
AV
DD
±1.5
±1.5
±1.5
±0.5
±1.5
±1.5
1.0
40
f
XIN
=8MHz
AV
DD
±1.5
±1.5
±1.5
±0.5
±1.5
±1.5
1.0
20
V
LSB
LSB
LSB
LSB
LSB
LSB
mA
µs
Unit
12
DEC. 1999 Ver 1.04
HYNIX [ HYNIX SEMICONDUCTOR ]
