GMS81C2112/GMS81C2120
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage ............................................. -0.3 to +7.0 V
Storage Temperature .................................... -40 to +85
°C
Voltage on Normal voltage pin
with respect to Ground (V
SS
)
..............................................................-0.3 to V
DD
+0.3 V
Voltage on High voltage pin
with respect to Ground (V
SS
)
............................................................ -45V to V
DD
+0.3 V
Maximum current out of V
SS
pin .......................... 150 mA
Maximum current into V
DD
pin .............................. 80 mA
Maximum current sunk by (I
OL
per I/O Pin) .......... 20 mA
Maximum output current sourced by (I
OH
per I/O Pin)
................................................................................... 8 mA
Maximum current (ΣI
OL
) ...................................... 100 mA
Maximum current (ΣI
OH
)........................................ 50 mA
Note:
Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
7.2 Recommended Operating Conditions
Specifications
Parameter
Supply Voltage
Operating Frequency
Operating Temperature
Symbol
V
DD
f
XIN
T
OPR
Condition
Min.
f
XI
= 4.5 MHz
V
DD
= V
DD
2.7
1
-40
Max.
5.5
4.5
85
V
MHz
Unit
°C
7.3 A/D Converter Characteristics
(T
A
=25°C, V
DD
=5V, V
SS
=0V, AV
DD
=5.12V, AV
SS
=0V @
f
XIN
=4MHz)
Specifications
Parameter
Analog Power Supply Input Voltage Range
Analog Input Voltage Range
Current Following
Between AV
DD
and
AV
SS
Overall Accuracy
Non-Linearity Error
Differential Non-Linearity Error
Zero Offset Error
Full Scale Error
Gain Error
Conversion Time
Symbol
AV
DD
V
AN
I
AVDD
CA
IN
N
NLE
N
DNLE
N
ZOE
N
FSE
N
NLE
T
CONV
f
XIN
=4MHz
Condition
Min.
Typ.
1
-
Unit
Max.
AV
DD
AV
DD
+0.3
-
-
-
-
-
-
-
-
200
±2
±2
±2
±2
±2
±2
20
V
V
uA
LSB
LSB
LSB
LSB
LSB
LSB
us
AV
SS
AV
SS
-0.3
-
-
-
-
-
-
-
-
1. Data in “Typ” column is at 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
JUNE. 2001 Ver 1.00
13
HYNIX [ HYNIX SEMICONDUCTOR ]
