1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
CAPACITANCE
(T
A
= 25
o
C, f=1MHz)
Parameter
Pin
CLK
Input capacitance
Data input/output capacitance
A0~A13, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM0~3
DQ0 ~ DQ31
Symbol
CI1
CI2
CI/O
6/H
Min
1.5
1.5
2.0
Max
3.5
3.0
4.5
Unit
pF
pF
pF
11
DC CHARACTERRISTICS I
(T
A
= -30 to 85
o
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Note :
1. V
IN
= 0 to 1.8V. All other pins are not tested under V
IN
=0V.
2. D
OUT
is disabled. V
OUT
= 0 to 1.95V.
3. I
OUT
= - 0.1mA
4. I
OUT
= + 0.1mA
Symbol
I
LI
I
LO
V
OH
V
OL
Min
-1
-1.5
0.9*VDDQ
-
Max
1
1.5
-
0.1*VDDQ
Unit
uA
uA
V
V
Note
1
2
3
4
Rev 1.2 / Jun. 2008
9
HYNIX [ HYNIX SEMICONDUCTOR ]
