H5MS5162DFR-K3M 参数 Datasheet PDF下载

512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O

Specification of

512Mb (32Mx16bit) Mobile DDR SDRAM

Memory Cell Array

- Organized as 4banks of 8,388,608 x16

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 1.3 / Apr. 2009

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