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H5PS5162FFR-Y5 参数 Datasheet PDF下载

H5PS5162FFR-Y5图片预览
型号: H5PS5162FFR-Y5
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB DDR2 SDRAM [512Mb DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 39 页 / 526 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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Release
H5PS5162FFR series
-Continue-
PIN
TYPE
DESCRIPTION
Data Strobe : Output with read data, input with write data. Edge aligned with read data,
centered in write data. For the x16, LDQS correspond to the data on DQ0~DQ7; UDQS
corresponds to the data on DQ8~DQ15. The data strobes DQS, LDQS and UDQS may be
used in single ended mode or paired with optional complementary signals DQS, LDQS
and UDQS to provide differential pair signaling to the system during both reads and
wirtes. An EMRS(1) control bit enables or disables all complementary data strobe sig-
nals.
UDQS, UDQS
LDQS, LDQS
Input/
Output
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0
of EMRS(1)
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1
of EMRS(1)
x16 LDQS and UDQS
NC
VDDQ
VSSQ
VDDL
VSSDL
VDD
VSS
VREF
Supply
Supply
Supply
Supply
Supply
Supply
Supply
No Connect : No internal electrical connection is present.
DQ Power Supply: 1.8V +/- 0.1V
DQ Ground
DLL Power Supply : 1.8V +/- 0.1V
DLL Ground
Power Supply : 1.8V +/- 0.1V
Ground
Reference voltage for inputs for SSTL interface.
Rev. 1.0 / July. 2008
7