HY29F040A Series
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
KEY FEATURES
·
5.0 V ± 10% Read, Program, and Erase
- Minimizes system-level power requirements
·
High performance
-
55 ns access time
·
Compatible with JEDEC-Standard Commands
- Uses software commands, pinouts, and
packages following industry standards for
single power supply Flash memory
·
Minimum 100,000 Program/Erase Cycles
·
Sector Erase Architecture
- Eight equal size sectors of 64K bytes each
- Any combination of sectors can be erased
concurrently; also supports full chip erase
·
Erase Suspend/Resume
- Suspend a sector erase operation to allow a
data read or programming in a sector not
being erased within the same device
·
Internal Erase Algorithms
- Automatically erases a sector, any combination
of sectors, or the entire chip
·
Internal Programming Algorithms
- Automatically programs and verifies data at a
specified address.
·
Low Power Consumption
- 40 mA maximum active read current
- 60 mA maximum program/erase current
- 5
mA
maximum standby current
·
Sector Protection
- Hardware method disables any combination
of sectors from a program or erase operation
DESCRIPTION
The HY29F040A is a 4 Megabit, 5.0 volt-only CMOS
Flash memory device organized as a 512K bytes
of 8 bits each. The device is offered in standard
32-pin PDIP, 32-pin PLCC and 32-pin TSOP pack-
ages. It is designed to be programmed and
erased in-system with a 5.0 volt power-supply and
can also be reprogrammed in standard PROM
programmers.
The HY29F040A offers access times of 55 ns, 70
ns, 90 ns, 120 ns and 150 ns. The device has sepa-
rate chip enable (/CE), write enable (/WE) and out-
put enable (/OE) controls. Hyundai Flash memory
devices reliably store memory data even after
100,000 program/erase cycles.
The HY29F040A is entirely pin and command set
compatible with the JEDEC standard for 4 Mega-
bit Flash memory devices. The commands are writ-
ten to the command register using standard micropro-
cessor write timings. Register contents serve as
input to an internal state-machine which controls
the erase and programming circuitry. Write cycles
also internally latch addresses and data needed
for the programming and erase operations.
The HY29F040A is programmed by executing the
program command sequence. This will start the
internal byte programming algorithm that
automatically times the program pulse width and
also verifies the proper cell margin. Erase is
accomplished by executing either sector erase or
chip erase command sequence. This will start the
internal erasing algorithm that automatically times
the erase pulse width and also verifies the proper
cell margin. No preprogramming is required prior to
execution of the internal erase algorithm. Sectors
of the HY29F040A Flash memory array are electri-
cally erased via Fowler-Nordheim tunneling. Bytes
are programmed one byte at a time using a hot
electron injection mechanism.
The HY29F040A features a sector erase architecture.
The device memory array is divided into 8 sectors of
64K bytes each. The sectors can be erased indi-
vidually or in groups without affecting the data in
other sectors. The multiple sector erase and full
chip erase capabilities add flexibility to altering the
data in the device. To protect data in the device
from accidental program and erase, the device
also has a sector protect function. This function
hardware write protects the selected sectors. The sector
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licences are implied.
Rev.03/Aug.97
Hyundai Semiconductor
HYNIX [ HYNIX SEMICONDUCTOR ]
