HY57V121620(L)T
4 Banks x 8M x 16Bit Synchronous DRAM
DESCRIPTION
The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large mem-
ory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16.
HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized
with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage
levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by
a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or
write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or
write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
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Single 3.3±0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin
pitch
All inputs and outputs referenced to positive edge of sys-
tem clock
Data mask function by UDQM, LDQM
Internal four banks operation
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Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
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- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
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ORDERING INFORMATION
Part No.
HY57V121620T-6
HY57V121620T-K
HY57V121620T-H
HY57V121620T-8
HY57V121620T-P
HY57V121620T-S
HY57V121620LT-6
HY57V121620LT-K
HY57V121620LT-H
HY57V121620LT-8
HY57V121620LT-P
HY57V121620LT-S
Clock Frequency
166MHz
133MHz
133MHz
125MHz
100MHz
100MHz
166MHz
133MHz
133MHz
125MHz
100MHz
100MHz
Power
Organization
Interface
Package
Normal
4Banks x 8Mbits x16
LVTTL
400mil 54pin TSOP II
Low power
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev.0.3/Dec. 01
1
HYNIX [ HYNIX SEMICONDUCTOR ]
