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HY57V281620AT-K 参数 Datasheet PDF下载

HY57V281620AT-K图片预览
型号: HY57V281620AT-K
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行x 2米X 16位同步DRAM [4 Banks x 2M x 16bits Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 13 页 / 97 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY57V281620A
COMMAND TRUTH TABLE
Command
Mode Register Set
CKEn-1
H
CKEn
X
CS
L
H
No Operation
H
X
L
Bank Active
Read
H
Read with Autoprecharge
Write
H
Write with Autoprecharge
Precharge All Banks
H
Precharge selected Bank
Burst Stop
DQM
Auto Refresh
Burst-Read-Single-
WRITE
Entry
Self Refresh
1
Exit
L
H
L
H
Entry
Precharge
power down
Exit
L
H
L
H
Clock
Suspend
Entry
H
L
L
Exit
L
H
V
X
V
V
X
H
X
H
X
H
X
X
X
H
L
L
H
H
X
H
X
H
X
X
X
H
X
H
X
H
X
X
H
H
H
H
H
H
X
L
L
L
L
H
X
L
H
X
L
L
L
X
L
L
L
X
H
L
H
X
X
H
L
X
V
X
X
X
X
X
L
L
H
L
X
X
L
X
X
X
A9 Pin High
(Other Pins OP code)
MRS
Mode
RAS
L
X
H
L
CAS
L
X
H
H
WE
L
X
DQM
X
ADDR
A10/
AP
OP code
BA
Note
X
H
H
X
RA
X
H
X
L
V
L
X
L
H
L
H
X
CA
H
L
V
X
L
H
L
L
X
CA
H
H
V
X
V
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don′t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.
Rev. 1.3/Aug. 01
13