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HY57V281620ET-6 参数 Datasheet PDF下载

HY57V281620ET-6图片预览
型号: HY57V281620ET-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128Mb的同步DRAM的基础上2米x 4Bank x16的I / O [128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 13 页 / 127 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No.
1.0
1.1
First Version Release
1. Corrected PIN ASSIGNMENT A12 to NC
History
Draft Date
Dec. 2004
Jan. 2005
Remark
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.1 / Jan. 2005
1