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HY57V283220T-7 参数 Datasheet PDF下载

HY57V283220T-7图片预览
型号: HY57V283220T-7
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行X 1M X 32位同步DRAM [4 Banks x 1M x 32Bit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 914 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY57V283220(L)T(P) / HY5V22(L)F(P)
AC CHARACTERISTICS II
(AC operating conditions unless otherwise noted)
-5
Parameter
Symbol
Min
Operation
RAS cycle time
Auto Refresh
RAS to CAS delay
tRRC
tRCD
55
15
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
55
tRC
55
Max
-
-55
Min
55
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
Min
60
60
18
-6
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
Min
63
63
20
-7
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
-H
Min
63
63
20
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
Min
64
64
20
-8
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
Min
70
70
20
-P
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
Min
70
70
20
-S
Unit
Max
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-
-
-
64
ns
ns
ns
Note
16.5
RAS active time
tRAS
38.7
38.7
42
42
42
48
50
50
ns
RAS precharge time
RAS to RAS bank active delay
CAS to CAS delay
Write command to data-in delay
Data-in to precharge command
Data-in to active command
DQM to data-out Hi-Z
DQM to data-in mask
MRS to new command
CAS Latency = 3
CAS Latency = 2
tRP
tRRD
tCCD
tWTL
tDPL
tDAL
tDQZ
tDQM
tMRD
tPROZ3
tPROZ2
tPDE
tSRE
tREF
15
2
1
0
1
4
2
0
2
3
2
1
1
-
16.5
2
1
0
1
4
2
0
2
3
2
1
1
-
18
2
1
0
1
4
2
0
2
3
2
1
1
-
20
2
1
0
1
4
2
0
2
3
2
1
1
-
20
2
1
0
1
4
2
0
2
3
2
1
1
-
20
2
1
0
1
4
2
0
2
3
2
1
1
-
20
20
1
0
1
4
2
0
2
3
2
1
1
-
20
20
1
0
1
4
2
0
2
3
2
1
1
-
ns
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
1
Precharge to data
output Hi-Z
Power down exit time
Self refresh exit time
Refresh Time
Note :
1. A new command can be given tRRC after self refresh exit
Rev. 0.9 / July 2004
10