欢迎访问ic37.com |
会员登录 免费注册
发布采购

HY57V28820HCT-I 参数 Datasheet PDF下载

HY57V28820HCT-I图片预览
型号: HY57V28820HCT-I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Banks X 4M X位8位同步DRAM [4Banks x 4M x 8bits Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 175 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号HY57V28820HCT-I的Datasheet PDF文件第2页浏览型号HY57V28820HCT-I的Datasheet PDF文件第3页浏览型号HY57V28820HCT-I的Datasheet PDF文件第4页浏览型号HY57V28820HCT-I的Datasheet PDF文件第5页浏览型号HY57V28820HCT-I的Datasheet PDF文件第6页浏览型号HY57V28820HCT-I的Datasheet PDF文件第7页浏览型号HY57V28820HCT-I的Datasheet PDF文件第8页浏览型号HY57V28820HCT-I的Datasheet PDF文件第9页  
HY57V28820HC(L)T-I
4Banks x 4M x 8bits Synchronous DRAM
DESCRIPTION
The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applica-
tions which require low power consumption and extended temperature range. f HY57V28820HC(L)T is organized as
4banks of 4,194,304x8.
HY57V28820HC(L)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and
outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very
high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
Single 3.3±0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm
of pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by DQM
Internal four banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full Page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
HY57V28820HCT-6I
HY57V28820HCT-KI
HY57V28820HCT-HI
HY57V28820HCT-8I
HY57V28820HCT-PI
HY57V28820HCT-SI
HY57V28820HCLT-6I
HY57V28820HCLT-KI
HY57V28820HCLT-HI
HY57V28820HCLT-8I
HY57V28820HCLT-PI
HY57V28820HCLT-SI
Clock Frequency
166MHz
133MHz
133MHz
125MHz
100MHz
100MHz
166MHz
133MHz
133MHz
125MHz
100MHz
100MHz
Power
Organization
Interface
Package
Normal
4Banks x 4Mbits
x8
LVTTL
400mil 54pin TSOP II
Low power
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.1/Jan. 02
1