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HY5S5B6ELFP-SE 参数 Datasheet PDF下载

HY5S5B6ELFP-SE图片预览
型号: HY5S5B6ELFP-SE
PDF下载: 下载PDF文件 查看货源
内容描述: 基于4M的256Mbit移动SDR SDRAM的X 4Bank x16的I / O [256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O]
分类和应用: 动态存储器
文件页数/大小: 27 页 / 240 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Document Title
4Bank x 4M x 16bits Synchronous DRAM
Revision History
Revision No.
0.1
0.2
0.3
1.0
Initial Draft
Modification of IDD Current
Modification of IDD3P & IDD3PS
IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA
Final revision
History
Draft Date
Aug. 2004
Oct. 2004
Jan. 2005
Jul. 2005
Remark
Preliminary
Preliminary
Preliminary
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Jul. 2005
1