欢迎访问ic37.com |
会员登录 免费注册
发布采购

HY5V26CF-H 参数 Datasheet PDF下载

HY5V26CF-H图片预览
型号: HY5V26CF-H
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行x 2米X 16位同步DRAM [4 Banks x 2M x 16bits Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 14 页 / 183 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号HY5V26CF-H的Datasheet PDF文件第1页浏览型号HY5V26CF-H的Datasheet PDF文件第2页浏览型号HY5V26CF-H的Datasheet PDF文件第4页浏览型号HY5V26CF-H的Datasheet PDF文件第5页浏览型号HY5V26CF-H的Datasheet PDF文件第6页浏览型号HY5V26CF-H的Datasheet PDF文件第7页浏览型号HY5V26CF-H的Datasheet PDF文件第8页浏览型号HY5V26CF-H的Datasheet PDF文件第9页  
HY5V26C(L/S)F
BALL DESCRIPTION
BALL OUT
F2
F3
SYMBOL
CLK
CKE
TYPE
INPUT
INPUT
DESCRIPTION
Clock : The system clock input. All other inputs are registered to the
SDRAM on the rising edge of CLK
Clock Enable : Controls internal clock signal and when deactivated,
the SDRAM will be one of the states among power down, suspend or
self refresh
Chip Select : Enables or disables all inputs except CLK, CKE, UDQM
and LDQM
Bank Address : Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8
Auto-precharge flag : A10
Command Inputs : RAS, CAS and WE define the operation
Refer function truth table for details
Data Mask:Controls output buffers in read mode and masks input
data in write mode
Data Input/Output:Multiplexed data input/output ball
G9
G7,G8
H7, H8, J8, J7,
J3, J2, H3, H2,
H1, G3, H9, G2
F8, F7, F9
F1, E8
A8, B9, B8, C9,
C8, D9, D8, E9,
E1, D2, D1, C2,
C1, B2, B1, A2
A9, E7, J9, A1,
E3, J1
A7, B3, C7, D3,
A3, B7, C3, D7
E2, G1
CS
BA0, BA1
A0 ~ A11
INPUT
INPUT
INPUT
RAS, CAS,
WE
UDQM,
LDQM
INPUT
INPUT
DQ0 ~ DQ15 I/O
VDD/VSS
SUPPLY
Power supply for internal circuits
Power supply for output buffers
No connection
VDDQ/VSSQ SUPPLY
NC
-