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HY5V66EF6P-H 参数 Datasheet PDF下载

HY5V66EF6P-H图片预览
型号: HY5V66EF6P-H
PDF下载: 下载PDF文件 查看货源
内容描述: 64MB同步DRAM的基础上1M X 4Bank x16的I / O [64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 12 页 / 220 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No.
0.01
Initial Draft
1. Editorial chage
0.80Typ --> 0.45 +/-0.05 (page12, Ball Dimension)
Before dimension :
History
Draft Date
Dec. 2004
Remark
Preliminary
0.80 Typ.
0.65 Typ.
0.2
After dimension :
June. 2005
Preliminary
0.450 +/- 0.05
0.65 Typ.
2. Added
Speed Product(100MHz CL2) (see to Page 02)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.2 / June. 2005
1