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HY62256ALJ 参数 Datasheet PDF下载

HY62256ALJ图片预览
型号: HY62256ALJ
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8bit CMOS SRAM [32Kx8bit CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 822 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
HY62256A-(I) Series
32Kx8bit CMOS SRAM
Description
Features
The
Fully static operation and
HY62256A/HY62256A-I
Tri-state outputs
is a high-speed, low
TTL compatible inputs
power and 32,786 x 8-bits
and outputs
CMOS Static Random
Low power consumption
Access Memory
-2.0V(min.) data
fabricated using
retention
Hyundai's high
Standard pin
performance CMOS
configuration
process technology. The
-28 pin 600 mil PDIP
HY62256A/HY62256A-I
-28 pin 330 mil SOP
has a data retention mode
-28 pin 8x13.4 mm
that guarantees data to
TSOP-1
remain valid at the
(standard and reversed)
minimum power supply
voltage of 2.0 volt. Using
the CMOS technology,
supply voltages from 2.0
to 5.5 volt has little effect
on supply current in the
data retention mode. The
HY62256A/HY62256A-I
is suitable for use in low
voltage operation and
battery back-up
application.
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22/10/97 12:30