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HY62V8100B 参数 Datasheet PDF下载

HY62V8100B图片预览
型号: HY62V8100B
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位3.3V低功耗CMOS SRAM慢 [128K x8 bit 3.3V Low Power CMOS slow SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 204 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY62V8100B Series
128Kx8bit CMOS SRAM
Document Title
128K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No
10
11
History
Initial Revision History Insert
Change the Notch Location of sTSOP
- Left-Top => Left-Center
Marking Information Add
Revised
- AC Test Condition Add : 5pF Test Load
Changed Logo
- HYUNDAI -> hynix
- Marking Information Change
Draft Date
Jul.14.2000
Sep.04.2000
Remark
Final
Final
12
Dec.04.2000
Final
13
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev 13 / Apr. 2001
Hynix Semiconductor