HY62V8400A 参数 Datasheet PDF下载

HY62V8400A Series

512Kx8bit CMOS SRAM

Document Title

512K x8 bit 3.3V Low Power CMOS slow SRAM

Revision History

Revision No

03

History

Revision History Insert

Revised

- Improved standby current

Isb1 : 30uA

¡ æ

0uA

2

Revised

- Change Iccdr Value : 15uA => 20uA

Marking Information Add

Revised

-

E.T (-25~85°C), I.T (-40~85°C) Part Insert

-

AC Test Condition Add : 5pF Test Load

-

V

IH

max : Vcc + 0.2V => Vcc + 0.3V

-

V

IL

min : - 0.2V => - 0.3V

Changed Logo

- HYUNDAI -> hynix

- Marking Information Change

Draft Date

Jul.06.2000

Remark

Final

04

05

Aug.04.2000

Dec.04.2000

Final

Final

06

Apr.30.2001

Final

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev 06 / Apr. 2001

Hynix Semiconductor