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HYMP112S64CP6-Y5 参数 Datasheet PDF下载

HYMP112S64CP6-Y5图片预览
型号: HYMP112S64CP6-Y5
PDF下载: 下载PDF文件 查看货源
内容描述: 1200pin无缓冲DDR2 SDRAM SO- DIMM内存模块 [1200pin Unbuffered DDR2 SDRAM SO-DIMMs]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 23 页 / 516 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 1Gb version C
This Hynix unbuffered Small Outline Dual In-Line Memory Module(DIMM) series consists of 1Gb version C DDR2
SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb version C based
Unbuffered DDR2 SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of indus-
try standard. It is suitable for easy interchange and addition.
FEATURES
JEDEC standard Double Data Rate 2 Synchronous
DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power
Supply
All inputs and outputs are compatible with SSTL_1.8
interface
Posted CAS
Programmable CAS Latency 3 ,4 ,5, and 6
OCD (Off-Chip Driver Impedance Adjustment) and
ODT (On-Die Termination)
Fully differential clock operations (CK & CK)
Programmable Burst Length 4 / 8 with both
sequential and interleave mode
Auto refresh and self refresh supported
8192 refresh cycles / 64ms
Serial presence detect with EEPROM
DDR2 SDRAM Package: 60 ball(x8) , 84 ball(x16)
FBGA
67.60 x 30.00 mm form factor
RoHS compliant
ORDERING INFORMATION
Part Name
HYMP164S64CP6-C4/Y5/S5/S6
HYMP164S64CR6-C4/Y5/S5/S6
HYMP112S64CP6-C4/Y5/S5/S6
HYMP112S64CR6-C4/Y5/S5/S6
HYMP125S64CP8-C4/Y5/S5/S6
HYMP125S64CR8-C4/Y5/S5/S6
Density
512MB
512MB
1GB
1GB
2GB
2GB
Organization
64Mx64
64Mx64
128Mx64
128Mx64
256Mx64
256Mx64
# of
DRAMs
4
4
8
8
16
16
# of
ranks
1
1
2
2
2
2
Materials
Lead free
Halogen free
Lead free
Halogen free
Lead free
Halogen free
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.0 / Dec. 2009
1