Preliminary Data Sheet
ICE13N65FP
ICE13N65FP
N-Channel
Enhancement Mode MOSFET
Features
• Low
r
DS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
Product Summary
I
D
V
(BR)DSS
r
DS(on)
FREE
T
A
=25
o
C
I
D
=250uA
V
GS
=10V
V
DS
=480V
D
13A
650V
0.25Ω
59nC
Max
Min
Typ
Typ
Q
g
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE
.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings
b
Parameter
, at
T
j
=25
o
C, unless otherwise specified
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I
D
I
D, pulse
E
AS
T
c
=25
o
C
T
c
=25
o
C
I
D
=6.5A
13
39
460
A
A
mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
I
AR
dv/dt
limited by
T
j
max
V
DS
=480V,
I
D
=13A,
T
j
=125
o
C
Static
AC (f>1Hz)
T
c
=25
o
C
6.5
50
±20
±
30
35
-55 to +150
A
V/ns
V
GS
P
tot
T
j
,
T
stg
V
W
o
C
M 2.5 screws
50
Ncm
b Preliminary Data Sheet – Specifications subject to change
SP-13N65FP-000-2a
06/05/2013
1