Preliminary Data Sheet
ICE20N170B
ICE20N170B
N-Channel
Enhancement Mode MOSFET
Features
• Low
r
DS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
Product Summary
I
D
V
(BR)DSS
r
DS(on)
Q
g
T
A
=25
o
C
I
D
=250uA
V
GS
=10V
V
DS
=480V
D
20A
600V
0.17Ω
62nC
Max
Min
Typ
Typ
G
S
T0263
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source
.
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE
.
Maximum ratings
b
Parameter
, at
T
j
=25
o
C, unless otherwise specified
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I
D
I
D, pulse
E
AS
T
c
=25
o
C
T
c
=25
o
C
I
D
=10A
20
62
520
A
A
mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
a When mounted on 1inch square 2oz copper clad FR-4
I
AR
dv/dt
limited by
T
j
max
V
DS
=480V,
I
D
=20A,
T
j
=125
o
C
Static
AC (f>1Hz)
T
c
=25
o
C
20
50
±20
±
30
208
-55 to +150
A
V/ns
V
GS
P
tot
T
j
,
T
stg
V
W
o
C
b Preliminary Data Sheet – Specifications subject to change
SP-20N170B-000-2b
05/31/2013
1
ICEMOS [ Icemos Technology ]
