Preliminary Data Sheet
ICE47N65W
Parameter
Thermal characteristics
Thermal resistance, junction-
case
a
Thermal resistance, junction-
ambient
a
Soldering temperature, wave
soldering only allowed at leads
R
thJC
R
thJA
T
sold
leaded
1.6mm (0.063in.) from
case for 10 s
-
-
-
-
-
-
0.3
o
Symbol
Conditions
Values
Min
Typ
Max
Unit
C/W
62
260
o
C
Electrical characteristics
b
,
at
T
=25
o
C, unless otherwise specified
j
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS(th)
Gate threshold voltage
V
GS
=0 V,
I
D
=1mA
V
DS
=V
GS
,
I
D
=250µA
V
DS
=650V,
V
GS
=0V,
o
T
j
=25 C
V
DS
=650V,
V
GS
=0V,
o
T
j
=150 C
V
GS
=±20 V,
V
DS
=0V
V
GS
=10V,
I
D
=24A,
o
T
j
=25 C
V
GS
=10V,
I
D
=24A,
o
T
j
=150 C
f=1
MHZ, open drain
650
2.1
-
675
3
0.1
-
3.9
1
V
Zero gate voltage drain current
I
DSS
µA
-
-
-
-
-
-
-
0.063
0.17
6
100
200
0.07
Ω
-
-
Ω
nA
Gate source leakage current
Drain-source
on-state resistance
Gate resistance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
I
GSS
R
DS (on)
R
G
C
iss
C
oss
C
rss
g
fs
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0 V,
V
DS
=25 V,
f=1
MHz
-
-
5970
677
-
-
pF
-
V
DS
>2*I
D
*R
DS
, I
D
=24A
V
DS
=380V,
V
GS
=10V,
I
D
=47A,
R
G
=4Ω (External)
-
-
-
-
-
35
50
160
25
20
25
-
-
-
-
-
-
ns
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
S
SP-47N65W-000-3a
06/05/2013
2
ICEMOS [ Icemos Technology ]
