Preliminary Data Sheet
ICE4N65D
ICE4N65D
N-Channel
Enhancement Mode MOSFET
Features
• Low
r
DS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
Product Summary
I
D
V
(BR)DSS
r
DS(on)
FREE
T
A
=25
o
C
I
D
=250uA
V
GS
=10V
V
DS
=480V
D
4A
650V
0.85Ω
21nC
Max
Min
Typ
Typ
Q
g
G
S
T0252
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE
.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source
.
Maximum ratings
b
Parameter
Continuous drain current
Pulsed drain current
c
, at
T
j
=25
o
C, unless otherwise specified
Symbol
I
D
I
D, pulse
E
AS
I
AR
dv/dt
Conditions
T
c
=25
o
C
T
c
=100
o
C
T
c
=25
o
C
I
D
=2A
limited by
T
j
max
Value
4
2.6
12
80
2
50
±20
±30
40
-55 to +150
Unit
A
A
A
mJ
A
V/ns
Avalanche energy, single pulse
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
a When mounted on 1inch square 2oz copper clad FR-4
V
DS
=480V,
I
D
=4A,
T
j
=125
o
C
Static
AC (f>1Hz)
T
c
=25
o
C
V
GS
P
tot
T
j
,
T
stg
V
W
o
C
b Preliminary Data Sheet – Specifications subject to change
c Limited by
Tjmax
SP-4N65D-000-0
11/22/2013
1
ICEMOS [ Icemos Technology ]
