iC-HQ
HIGH-PERFORMANCE QUAD OPAMP
y
inar
relim
p
Rev A1, Page 3/7
ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed.
Item
No.
Symbol
Parameter
Supply Voltage
Current in VDD
Voltage at IPx, INx
Current in IPx, INx
Voltage at Ox
Current in Ox
Input Difference Voltage
Susceptibility to ESD at all pins
Storage Temperature Range
Operating Junction Temperature
V(IPx)
−
V(INx)
HBM, 100 pF discharged through 1.5 kΩ
-40
-40
Referenced to GND, V(Ox) < VDD + 0.5 V
Conditions
Min.
-0.5
-10
-0.5
-5
-0.5
-30
-6
Max.
6
80
VDD +
0.5
5
6
30
6
1
150
150
V
mA
V
mA
V
mA
V
kV
°C
°C
Unit
G001 VDD
G002 I(VDD)
G003 V()
G004 I()
G005 V()
G006 I()
G007 VDiff()
G008 Vd()
G009 Ts
G010 Tj
THERMAL DATA
Operation Conditions: VDD = 5 V ±10 %
Item
No.
T01
T02
Symbol
Ta
Rthja
Parameter
Operating Ambient Temperature Range
Thermal Resistance Chip/Ambient
SMD assembly, no additional cooling areas
Conditions
Min.
-40
Typ.
Max.
125
140
°C
K/W
Unit
All voltages are referenced to ground unless otherwise stated.
All currents into the device pins are positive; all currents out of the device pins are negative.
ICHAUS [ IC-HAUS GMBH ]
