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IC42S32200/L-7BIG 参数 Datasheet PDF下载

IC42S32200/L-7BIG图片预览
型号: IC42S32200/L-7BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K字× 32位×4银行( 64兆位)同步动态RAM [512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 62 页 / 898 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
 浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第8页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第9页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第10页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第11页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第13页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第14页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第15页浏览型号IC42S32200/L-7BIG的Datasheet PDF文件第16页  
IC42S32200  
IC42S32200L  
T8  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
NOP  
NOP  
NOP  
COMMAND  
NOP  
WRITEA  
WRITEB  
NOP  
NOP  
NOP  
1 Clk Interval  
DIN DIN B  
A
DIN B  
DIN B  
DIN B  
3
DQ’s  
0
0
1
2
Write Interrupted by a Write (Burst Length =4,CAS#Latency =2,3)  
The Read command that interrupts a write burst without auto precharge function should be issued one cycle after  
the clock edge in which the last data-in element is registered.In order to avoid data contention,input data must  
be removed from the DQs at least one clock cycle before the first read data appears on the outputs (refer to the  
following figure).Once the Read command is registered,the data inputs will be ignored and writes will not be  
executed.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
NOP  
NOP  
NOP  
COMMAND  
CAS# latency=2  
NOP  
WRITEA  
READ B  
NOP  
NOP  
NOP  
DOUT B  
DOUT B  
3
DIN A  
0
DOUT B  
DOUT B  
DOUT B  
don’t care  
don’t care  
2
0
1
t
, DQ’s  
CK2  
CAS# latency=3  
DOUT B  
DOUT B  
DOUT B  
3
DIN A  
0
don’t care  
0
1
2
t
, DQ’s  
CK3  
Input data must be removed from the DQs at least one clock  
cycle before the Read data appears on the outputs to avoid  
data contention.  
Input data for the write is masked.  
DIN  
Write Interrupted by a Read (Burst Length =4,CAS#Latency =2,3)  
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function  
should be issued m cycles after the clock edge in which the last data-in element is registered,where m equals tWR/  
tCK rounded up to the next whole number.In addition,the DQM signals must be used to mask input data,starting  
with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/  
PrechargeAll command is entered (refer to the following figure).  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
DQM  
t
RP  
COMMAND  
WRITE  
Precharge  
NOP  
NOP  
Activate  
ROW  
NOP  
NOP  
n+1  
BANK  
COL n  
(S)  
BANK  
ADDRESS  
DQ  
t
WR  
DIN  
n
: don t care  
Note:The DQMs can remain low in this example if the length of the write burst is 1 or 2.  
Write to Precharge  
12  
Integrated Circuit Solution Inc.  
DR036-0D 02/04/2005