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IC42S16400-6T 参数 Datasheet PDF下载

IC42S16400-6T图片预览
型号: IC42S16400-6T
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的×4银行( 64兆位) SDRAM [1M x 16Bit x 4 Banks (64-MBIT) SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 68 页 / 1091 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16400
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
DDQ
Parameters
Rating
Unit
V
V
V
V
mA
W
°C
°C
V
I
V
O
I
O
P
D
T
OPT
T
STG
Supply Voltage (with respect to V
SS
)
–0.5 to +4.6
Supply Voltage for Output (with respect to V
SSQ
)
–0.5 to +4.6
Input Voltage
(with respect to V
SS
)
–0.5 to V
DD
+0.5
Output Voltage
(with respect to V
SSQ
)
–1.0 to V
DDQ
+0.5
Short circuit output current
50
Power Dissipation (
T
A
= 25 °C)
1
Operating Temperature
Storage Temperature
0 to +70
–65 to +150
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(
At T
A
= 0 to +70°C unless otherwise noted)
Symbol
V
DD
V
DDQ
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Min.
3.0
3.0
2.0
-0.3
Typ.
3.3
3.3
Max.
3.6
3.6
V
DD
+ 0.3
+0.8
Unit
V
V
V
V
CAPACITANCE CHARACTERISTICS
(At T
A
= 0 ~ 70°C, V
DD
= V
DDQ
= 3.3 ± 0.3V, V
SS
= V
SSQ
= 0V , unless otherwise noted)
Symbol
C
IN
C
CLK
C
I
/
O
Parameter
Input Capacitance, address & control pin
I
nput Capacitance, CLK pin
Min.
2.5
2.5
4.0
Max.
3.8
3.5
6.5
Unit
pF
pF
pF
Data Input/Output Capacitance
Integrated Circuit Solution Inc.
DR034-0E 12/02/2003
5