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IC42S32400L-7T 参数 Datasheet PDF下载

IC42S32400L-7T图片预览
型号: IC42S32400L-7T
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×32位×4银行( 128兆位) SDRAM [1M x 32 Bit x 4 Banks (128-MBIT) SDRAM]
分类和应用: 存储动态存储器
文件页数/大小: 62 页 / 897 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S32400  
IC42S32400L  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
COMMAND  
DQ’s  
NOP  
READ A  
NOP  
NOP  
NOP  
NOP  
WRITE B  
DINB  
NOP  
NOP  
DOUT A  
DINB  
DINB  
2
0
1
Must be Hi-Z before  
the Write Command  
: "H" or "L"  
Read to Write Interval (Burst Length = 4,CAS#Latency =3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
1 Clk Interval  
DQM  
BANKA  
ACTIVAT E  
READ A  
COMMAND  
WRITEA  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CAS# latency=2  
tCK2, DQs  
DIN A  
0
DIN A  
DIN A  
DIN A  
3
1
2
: "H" or "L"  
Read to Write Interval (Burst Length = 4,CAS#Latency =2)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
NOP  
READ A  
WRITEB  
DIN B  
COMMAND  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CAS# latency=2  
DIN B  
DIN B  
DIN B  
3
tCK2, DQs  
0
1
2
CK2  
: "H" or "L"  
Read to Write Interval (Burst Length = 4,CAS#Latency =2)  
A read burst without the auto precharge function may be interrupted by a BankPrecharge/  
PrechargeAll command to the same bank.The following figure shows the optimum time that  
BankPrecharge/PrechargeAll command is issued in different CAS#latency.  
10  
Integrated Circuit Solution Inc.  
DR038-0C 02/01/2005