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IC61C1024-25T 参数 Datasheet PDF下载

IC61C1024-25T图片预览
型号: IC61C1024-25T
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM [128K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 172 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC61C1024
IC61C1024L
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range, Standard and Low
Power)
Symbol
Parameter
Write Cycle Time
CE1
to Write End
CE2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
-12 ns
(3)
Min. Max.
12
10
10
10
0
0
10
7
0
2
7
-15 ns
Min. Max.
15
12
12
12
0
0
10
8
0
2
7
-20 ns
Min. Max.
20
15
15
15
0
0
12
10
0
2
10
-25 ns
Min. Max.
25
20
20
20
0
0
15
12
0
2
12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE
1
t
SCE
2
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
t
HZWE
(5)
WE
LOW to High-Z Output
t
LZWE
(5)
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
3. -12 ns device for IC61C1024 only.
4. Tested with
OE
HIGH.
5. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
8
Integrated Circuit Solution Inc.
AHSR008-0B 10/18/2001