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IC61C1024L-20J 参数 Datasheet PDF下载

IC61C1024L-20J图片预览
型号: IC61C1024L-20J
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM [128K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 172 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC61C1024
IC61C1024L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
1.5
20
Unit
V
°C
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
7
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
V
IN
V
CC
GND
V
OUT
V
CC
Outputs Disabled
Com.
Ind.
Com.
Ind.
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
2.2
–0.3
–2
–5
–2
–5
Max.
0.4
V
CC
+ 0.5
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
4
Integrated Circuit Solution Inc.
AHSR008-0B 10/18/2001