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IC61LV2568-10TI 参数 Datasheet PDF下载

IC61LV2568-10TI图片预览
型号: IC61LV2568-10TI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8海特高速SRAM与3.3V [256K x 8 Hight Speed SRAM with 3.3V]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 183 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC61LV2568
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
-8 ns
Symbol
Parameter
Write Cycle Time
CE
to Write End
Address Setup Time
to Write End
Address Hold
from Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
Min.
Max.
-10 ns
Min.
Max.
-12 ns
Min.
Max.
-15 ns
Min.
Max.
Unit
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
8
7
7
0
0
7
4.5
0
0
3
10
8
8
0
0
8
5
0
0
4
12
9
9
0
0
9
6
0
0
5
15
10
10
0
0
10
7
0
0
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
HZWE
(3)
WE
LOW to High-Z Output
t
LZWE
(3)
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing
are referenced to the rising or falling edge of the signal that terminates the Write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
4.Tested with
OE
Hith.
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2 )
(CE
Controlled,
OE
is HIGH or LOW)
t
WC
ADDRESS
VALID ADDRESS
t
SA
CE
t
SCE
t
HA
WE
t
AW
t
PWE1
t
PWE2
t
HZWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
SD
D
IN
t
HD
DATA
IN
VALID
Integrated Circuit Solution, Inc.
AHSR023-0A
09/12/2001
7