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IC62C1024-70QI 参数 Datasheet PDF下载

IC62C1024-70QI图片预览
型号: IC62C1024-70QI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM [128K X 8 HIGH SPEED CMOS STATIC RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 121 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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1+$ + "
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range, Standard and Low
Power)
Symbol
Parameter
Write Cycle Time
CE1
to Write End
CE2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
Min.
35
25
25
25
0
0
25
20
0
—
3
-35
Max.
—
—
—
—
—
—
—
—
—
10
—
-45
Min. Max.
45
35
35
35
0
0
35
25
0
—
5
—
—
—
—
—
—
—
—
—
15
—
Min.
55
50
50
45
0
0
40
25
0
—
5
-55
Max.
—
—
—
—
—
—
—
—
—
20
—
-70
Min. Max.
70
60
60
60
0
0
50
30
0
—
5
—
—
—
—
—
—
—
—
—
25
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE

t
SCE
t
AW
t
HA
t
SA
t
PWE
"
t
SD
t
HD
t
HZWE
 
WE
LOW to High-Z Output
t
LZWE
 
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in .igure 1a.
2. Tested with the load in .igure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
AC WAVE.ORMS
9-
WRITE CYCLE NO. 1 (9- Controlled)
(1,2)
t
WC
ADDRESS
VALID ADDRESS
t
SA
CE
t
SCE
t
HA
WE
t
AW
t
PWE1
t
PWE2
t
HZWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
SD
D
IN
t
HD
DATA
IN
VALID
6
Integrated Circuit Solution Inc.
ALSR005-0A