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IC62C1024-45T 参数 Datasheet PDF下载

IC62C1024-45T图片预览
型号: IC62C1024-45T
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM [128K X 8 HIGH SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 121 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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1+$ + "
+-
WRITE CYCLE NO. 2 (+- CE2 Controlled)
(1,2)
+-,
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
CE
LOW
t
AW
t
PWE1
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
Notes:
1. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
= V
IH
.
Integrated Circuit Solution Inc.
ALSR005-0A
7