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IC62LV1008LL-70B 参数 Datasheet PDF下载

IC62LV1008LL-70B图片预览
型号: IC62LV1008LL-70B
PDF下载: 下载PDF文件 查看货源
内容描述: 1一M× 8位低电压和超低功耗CMOS静态RAM [1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 11 页 / 152 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC62LV1008L
IC62LV1008LL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range, Standard and Low Power)
Symbol
Parameter
Write Cycle Time
CE1
to Write End
CE2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
-55
Min. Max.
55
50
50
50
0
0
45
25
0
5
30
-70
Min. Max.
70
65
65
65
0
0
55
30
0
5
30
-100
Min. Max
100
80
80
80
0
0
80
40
0
5
40
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE
1
t
SCE
2
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
t
HZWE
(3)
WE
LOW to High-Z Output
t
LZWE
(3)
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 2.2V and output loading specified in
Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE1 LOW , CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1
(WE
Controlled)
(1,2)
t
WC
ADDRESS
t
SCE1
t
HA
CE1
t
SCE2
CE2
t
AW
t
PWE
t
SA
t
HZWE
HIGH-Z
WE
t
LZWE
DOUT
DATA UNDEFINED
t
SD
t
HD
DIN
DATA-IN VALID
8
Integrated Circuit Solution Inc.
LPSR015-0A 1/3/2001