IC62LV25616L
IC62LV25616LL
Document Title
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
0A
0B
History
Initial Draft
Draft Date
May 1,2001
Remark
Preliminary
1. Change for t
PWE
: 45 to 40 ns for 55 ns product
August 21,2001
: 60 to 40 ns for 70 ns product
2. Change for V
CC
: 2.2-3.6V to 2.7-3.6V
3.1 Change for I
CC
test conditiomn: V
CC
=Max. to 3V
3.2 Change for I
CC
: 35 to 40mA for 55 ns commercial product
30 to 35mA for 70 ns commercial porduct
25 to 30 mA for 100 ns commercial product
4. Change for I
SB1
test conditions: with
CE
controlled only
5.1 Change for V
DR
Min. : 1.2 to 1.5V
5.2 Change for I
DR
test condition: V
CC
=1.2 to 1.5V
January 29,2002
1.Change for I
CC
: 40 mA to 25 mA for 55 ns
35 mA to 20 mA for 70 ns
30 mA to 15mA for 100 ns
2.Change for I
DR
: 4µA to 5 µA for commercial/LL product
6µA to 9 µA for Industrial/LL Product
October 9,2002
Change for V
OH
: 2.0V to 2.4V
0C
0D
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR013-0D 10/11/2002
1
ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
