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IC62LV256L-15TI 参数 Datasheet PDF下载

IC62LV256L-15TI图片预览
型号: IC62LV256L-15TI
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低功耗SRAM与3.3V [32K x 8 Low Power SRAM with 3.3V]
分类和应用: 存储静态存储器
文件页数/大小: 9 页 / 110 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC62LV256L
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
Symbol
Parameter
Write Cycle Time
CE
to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
WE
LOW to High-Z Output
WE
HIGH to Low-Z Output
-15 ns
Min. Max.
15
10
10
0
0
10
8
0
0
7
-20 ns
Min. Max.
20
13
15
0
0
13
10
0
0
8
-25 ns
Min. Max.
25
15
20
0
0
15
12
0
0
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE Controlled)
(1,2)
WE
t
WC
ADDRESS
t
SCE
t
HA
CE
t
AW
WE
t
SA
t
HZWE
t
PWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
SD
t
HD
D
IN
DATA-IN VALID
Integrated Circuit Solution Inc.
ALSR008-0A 10/5/2001
7