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IC62LV256-70JI 参数 Datasheet PDF下载

IC62LV256-70JI图片预览
型号: IC62LV256-70JI
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8低功耗SRAM与3.3V [32K x 8 Low Power SRAM with 3.3V]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 90 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC62LV256
WRITE CYCLE NO. 2 (CE Controlled)
(1,2)
CE
t
WC
ADDRESS
t
SA
t
SCE
t
HA
CE
t
AW
t
PWE
WE
t
HZWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
SD
t
HD
D
IN
DATA-IN VALID
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
V
IH
.
8
Integrated Circuit Solution Inc.
ALSR007-0A 10/5/2001