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IS61LV12816-12T 参数 Datasheet PDF下载

IS61LV12816-12T图片预览
型号: IS61LV12816-12T
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM [128K x 16 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 146 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV12816
AC WAVEFORMS
WRITE CYCLE NO. 1

(1 ,2)
(CE Controlled,
OE
is HIGH or LOW)
t
WC
ADDRESS
VALID ADDRESS
t
SA
CE
t
SCE
t
HA
WE
t
AW
t
PWE1
t
PWE2
t
PWB
UB, LB
t
HZWE
D
OUT
DATA UNDEFINED
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (CE)
[
(LB) = (UB)
]
(WE).
8
Integrated Circuit Solution, Inc.
SR023_0C