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IS61LV12816-12TI 参数 Datasheet PDF下载

IS61LV12816-12TI图片预览
型号: IS61LV12816-12TI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM [128K x 16 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 11 页 / 146 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV12816
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
Symbol
Parameter
Write Cycle Time
CE
to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
LB, UB
Valid to End of Write
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
Min.
8
7
7
0
0
7
7
4.5
0
—
0
-8
Max.
—
—
—
—
—
—
—
—
—
3
—
-10
Min. Max.
10
8
8
0
0
8
8
5
0
—
0
—
—
—
—
—
—
—
—
—
4
—
-12
Min. Max.
12
8
8
0
0
9
9
6
0
—
0
—
—
—
—
—
—
—
—
—
5
—
-15
Min. Max.
15
10
10
0
0
10
10
7
0
—
0
—
—
—
—
—
—
—
—
—
6
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWB
t
PWE
"
t
SD
t
HD

!
"
#
$
%
&
'



t
HZWE
 
WE
LOW to High-Z Output
t
LZWE
 
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB,
and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
4.Tested with
OE
Hith.
Integrated Circuit Solution, Inc.
SR023_0C
7