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IS61LV12816-8BI 参数 Datasheet PDF下载

IS61LV12816-8BI图片预览
型号: IS61LV12816-8BI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM [128K x 16 HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 146 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV12816
WRITE CYCLE NO. 4

(1,3)
(LB,
UB
Controlled, Back-to-Back Write)
t
WC
ADDRESS
ADDRESS 1
t
WC
ADDRESS 2
OE
t
SA
CE
LOW
WE
t
HA
t
SA
t
PWB
t
PWB
WORD 2
t
HA
UB, LB
WORD 1
t
HZWE
D
OUT
HIGH-Z
t
LZWE
t
HD
DATA
IN
VALID
DATA UNDEFINED
t
SD
D
IN
t
SD
DATA
IN
VALID
t
HD
Notes:
1. The internal Write time is defined by the overlap of
CE
= LOW,
UB
and/or
LB
= LOW, and
WE
= LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The
t

SA
,
t

HA
,
t

SD
, and
t

HD
timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with
OE
HIGH for a minimum of 4 ns before
WE
= LOW to place the I/O in a HIGH-Z state.
3.
WE
may be held LOW across many address cycles and the
LB, UB
pins can be used to control the Write function.
10
Integrated Circuit Solution, Inc.
SR023_0C