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IS61LV12816-8KI 参数 Datasheet PDF下载

IS61LV12816-8KI图片预览
型号: IS61LV12816-8KI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16高速CMOS静态RAM [128K x 16 HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 11 页 / 146 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV12816  
WRITE CYCLE NO. 4 (1,3)(LB, UB Controlled, Back-to-Back Write)  
t
WC  
t
WC  
ADDRESS 1  
ADDRESS 2  
ADDRESS  
OE  
CE  
t
SA  
LOW  
t
HA  
SA  
t
HA  
t
WE  
t
PWB  
t
PWB  
UB, LB  
WORD 1  
WORD 2  
t
HZWE  
t
LZWE  
HIGH-Z  
DOUT  
DATA UNDEFINED  
t
HD  
t
HD  
t
SD  
t
SD  
DATAIN  
VALID  
DATAIN  
VALID  
DIN  
Notes:  
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be  
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is  
referenced to the rising or falling edge of the signal that terminates the Write.  
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.  
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.  
10  
Integrated Circuit Solution, Inc.  
SR023_0C