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IS61LV5128-15TI 参数 Datasheet PDF下载

IS61LV5128-15TI图片预览
型号: IS61LV5128-15TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8高速CMOS静态RAM [512K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 8 页 / 444 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IS61LV5128
WRITE CYCLE NO. 2
(1,2)

(WE Controlled,
OE
is HIGH During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
CE
LOW
t
AW
t
PWE1
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
WRITE CYCLE NO. 3

(WE Controlled,
OE
is LOW During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
OE
CE
LOW
t
HA
LOW
t
AW
t
PWE2
WE
t
SA
D
OUT
DATA UNDEFINED
t
HZWE
HIGH-Z
t
LZWE
t
SD
D
IN
t
HD
DATA
IN
VALID
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
> V
IH
.
Integrated Circuit Solution, Inc.
SR027-0C
7