IS62LV2568L
IS62LV2568LL
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
X
H
H
L
CE1
H
X
L
L
L
CE2
X
L
H
H
H
OE
X
X
H
L
X
I/O Operation
High-Z
High-Z
High-Z
D
OUT
D
IN
Vcc Current
I
SB
, I
SB
I
SB
, I
SB
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
CC
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
0.5 to Vcc + 0.5
0.3 to +4.0
40 to +85
65 to +150
0.7
Unit
V
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
CC
= Min., I
OH
= 1.0 mA
V
CC
= Min., I
OL
= 2.1 mA
Min.
2.2
2.2
0.3
1
1
Max.
0.4
V
CC
+ 0.3
0.4
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
Notes:
1. V
IL
= 2.0V for pulse width less than 10 ns.
Integrated Circuit Solution Inc.
SR025_0C
3
ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
