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IDT7024S25PF 参数 Datasheet PDF下载

IDT7024S25PF图片预览
型号: IDT7024S25PF
PDF下载: 下载PDF文件 查看货源
内容描述: 高速4K ×16双口静态RAM [HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 20 页 / 291 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7024S/L
HIGH-SPEED 4K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
Outputs
CE
H
X
L
L
L
L
L
L
X
R/
W
X
X
L
L
L
H
H
H
X
OE
X
X
X
X
X
L
L
L
H
UB
X
H
L
H
L
L
H
L
X
LB
X
H
H
L
L
H
L
L
X
SEM
H
H
H
H
H
H
H
H
X
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
High-Z
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
Both Bytes Deselected
Mode
Deselected: Power-Down
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
DATA
OUT
Read Lower Byte Only
High-Z
Outputs Disabled
2740 tbl 03
DATA
OUT
DATA
OUT
Read Both Bytes
NOTE:
1. A
0L
— A
11L
are not equal to A
0R
— A
11R.
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
Outputs
CE
H
X
H
X
L
L
R/
W
H
H
OE
L
L
X
X
X
X
UB
X
H
X
H
L
X
LB
X
H
X
H
X
L
SEM
L
L
L
L
L
L
I/O
8-15
I/O
0-7
Mode
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
IN
DATA
IN
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
Not Allowed
u
u
X
X
2740 tbl 04
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all of the I/O's (I/O
0
- I/O
15
). These eight semaphores are addressed by A
0
- A
2
.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Commercial
Military
–0.5 to +7.0
Unit
V
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
0 to +70
–55 to +125
–55 to +125
50
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
Max. Unit
5.5
0
6.0
(2)
0.8
V
V
V
V
2740 tbl 06
T
A
T
BIAS
T
STG
I
OUT
–55 to +125
–65 to +135
–65 to +150
50
°C
°C
°C
mA
V
IL
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
NOTES:
2740 tbl 05
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc +0.5V for more than 25% of the cycle time or
10ns maximum, and is limited to < 20ma for the period over V
TERM >
Vcc
+ 0.5V
.
(T
A
= +25°C, F = 1.0MHZ) TQFP ONLY
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Condition
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
CAPACITANCE
(1)
NOTES:
2740 tbl 07
1. This parameter are determined by device characterization, but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
6.15
4