欢迎访问ic37.com |
会员登录 免费注册
发布采购

IDT71024S12Y 参数 Datasheet PDF下载

IDT71024S12Y图片预览
型号: IDT71024S12Y
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS静态RAM 1 MEG ( 128K ×8位) [CMOS STATIC RAM 1 MEG (128K x 8-BIT)]
分类和应用:
文件页数/大小: 8 页 / 72 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
 浏览型号IDT71024S12Y的Datasheet PDF文件第1页浏览型号IDT71024S12Y的Datasheet PDF文件第2页浏览型号IDT71024S12Y的Datasheet PDF文件第3页浏览型号IDT71024S12Y的Datasheet PDF文件第4页浏览型号IDT71024S12Y的Datasheet PDF文件第5页浏览型号IDT71024S12Y的Datasheet PDF文件第7页浏览型号IDT71024S12Y的Datasheet PDF文件第8页  
IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 1
(1)
t
RC
ADDRESS
t
AA
OE
t
OE
CS1
t
OLZ
(5)
CS2
t
CLZ
(5)
DATA
OUT
Vcc
SUPPLY
CURRENT
Icc
Isb
t
ACS
(3)
t
OHZ
(5)
t
CHZ
(5)
DATA
OUT
VALID
t
PD
HIGH IMPEDANCE
t
PU
2964 drw 06
TIMING WAVEFORM OF READ CYCLE NO. 2
(1, 2, 4)
t
RC
ADDRESS
t
AA
t
OH
DATA
OUT
PREVIOUS DATA
OUT
VALID
t
OH
DATA
OUT
VALID
2964 drw 07
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Device is continuously selected,
CS1
is LOW, CS2 is HIGH.
3. Address must be valid prior to or coincident with the later of
CS1
transition LOW and CS2 transition HIGH; otherwise t
AA
is the limiting parameter.
4.
OE
is LOW.
5. Transition is measured
±200mV
from steady state.
6