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IDT71124S12Y 参数 Datasheet PDF下载

IDT71124S12Y图片预览
型号: IDT71124S12Y
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS静态RAM 1兆欧( 128K ×8位)引脚革命 [CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 85 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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CMOS Static RAM
1 Meg (128K x 8-Bit)
Revolutionary Pinout
Features
128K x 8 advanced high-speed CMOS static RAM
JEDEC revolutionary pinout (center power/GND) for
reduced noise.
Equal access and cycle times
– Commercial and Industrial: 12/15/20ns
One Chip Select plus one Output Enable pin
Bidirectional inputs and outputs directly TTL-compatible
Low power consumption via chip deselect
Available in a 32-pin 400 mil Plastic SOJ.
IDT71124
Description
The IDT71124 is a 1,048,576-bit high-speed static RAM orga-
nized as 128K x 8. It is fabricated using IDT’s high-performance,
high-reliability CMOS technology. This state-of-the-art technology,
combined with innovative circuit design techniques, provides a cost-
effective solution for high-speed memory needs. The JEDEC
centerpower/GND pinout reduces noise generation and improves
system performance.
The IDT71124 has an output enable pin which operates as fast
as 6ns, with address access times as fast as 12ns available. All
bidirectional inputs and outputs of the IDT71124 are TTL-compatible
and operation is from a single 5V supply. Fully static asynchronous
circuitry is used; no clocks or refreshes are required for operation.
The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.
x
x
x
x
x
x
x
Functional Block Diagram
A
0
A
16
ADDRESS
DECODER
1,048,576-BIT
MEMORY ARRAY
I/O
0
- I/O
7
8
I/O CONTROL
8
8
,
WE
OE
CS
CONTROL
LOGIC
3514 drw 01
FEBRUARY
2001
1
©2000 Integrated Device Technology, Inc.
DSC-3514/10