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IDT71V016S20YI 参数 Datasheet PDF下载

IDT71V016S20YI图片预览
型号: IDT71V016S20YI
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V CMOS静态RAM 1兆欧( 64K ×16位) [3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)]
分类和应用:
文件页数/大小: 9 页 / 81 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Features
IDT71V016
Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM
organized as 64K x 16. It is fabricated using IDT’s high-perfomance,
high-reliability CMOS technology. This state-of-the-art technology,
combined with innovative circuit design techniques, provides a
cost-effective solution for high-speed memory needs.
The IDT71V016 has an output enable pin which operates as fast
as 7ns, with address access times as fast as 12ns. All bidirectional
inputs and outputs of the IDT71V016 are LVTTL-compatible and
operation is from a single 3.3V supply. Fully static asynchronous circuitry
is used, requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin
Plastic SOJ and 44-pin TSOP Type II.
64K x 16 advanced high-speed CMOS Static RAM
Commercial (0° to +70°C) and Industrial (–40°C to +85°C)
Equal access and cycle times
— Commercial and Industrial: 15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V (±0.3V) power supply
Available in 44-pin Plastic SOJ and 44-pin TSOP
package.
Functional Block Diagram
OE
Output
Enable
Buffer
A
0
- A
15
Address
Buffers
CS
Chip
Enable
Buffer
WE
O
Write
Enable
Buffer
Byte
Enable
Buffers
N N
I
A
T CE
6S NS
R S
01 IG
A E
V S
P L
71 DE
O
ER W
S
D E
B
R N
Row / Column
Decoders
I/O
15
8
High
Byte
I/O
Buffer
8
I/O
8
C
E
O R
O
F
64K x 16
Memory
Array
16
Sense
Amps
and
Write
Drivers
I/O
7
8
Low
Byte
I/O
Buffer
8
I/O
0
BHE
BLE
3211 drw 01
AUGUST 2000
1
©2000 Integrated Device Technology, Inc.
DSC-3211/08